High-speed sensing for resistive memories

High-speed sensing for resistive memories

  • CN 102,918,596 A
  • Filed: 05/31/2011
  • Published: 02/06/2013
  • Est. Priority Date: 06/01/2010
  • Status: Active Application
First Claim
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1. equipment, it comprises:

  • Sensing circuit, it comprises;

    The first amplifier stage, it is configured to the first current conversion of the first resistance-type memory element by memory cell is become the first single ended output voltage;

    AndThe second amplifier stage, it is configured to amplify described first single ended output voltage of described the first amplifier stage to produce the second single ended output voltage.

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