Optoelectronic semiconductor device

Optoelectronic semiconductor device

  • CN 102,938,438 A
  • Filed: 09/25/2008
  • Published: 02/20/2013
  • Est. Priority Date: 09/25/2008
  • Status: Active Application
First Claim
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1. opto-semiconductor device comprises:

  • The semiconductor system is in order to carry out the conversion between luminous energy and electric energy;

    One contact layer;

    One electrical contact is positioned on this contact layer;

    AndTwo or more locus of discontinuities, between this semiconductor system and this contact layer, and be distributed in around this electrical contact, make the electric current lateral flow that comes from this electrical contact to the outer rim of contact layer.

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