Optoelectronic semiconductor device

Optoelectronic semiconductor device

  • CN 102,938,438 B
  • Filed: 09/25/2008
  • Issued: 05/03/2017
  • Est. Priority Date: 09/25/2008
  • Status: Active Grant
First Claim
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1. a kind of opto-semiconductor device, comprising:

  • Semiconductor system, transmitting or absorption light, to carry out the conversion between luminous energy and electric energy;

    One contact layer;

    One electrical contact includes a root and a branch, and the electrical contact is located on the contact layer;

    One electric current barrier area is located at the lower section of the branch;

    AndTwo or more locus of discontinuities, it is Chong Die with the contact layer between the semiconductor system and the contact layer, and it is distributed in thisAround electrical contact, the electric current for coming from the electrical contact is set laterally to flow to the outer rim of contact layer,Wherein, the semiconductor system includes a plurality of depressed parts and the contact layer directly contact, and the locus of discontinuity is used to carryHeight leaves or into the energy stream or light intensity of the semiconductor system so that the light is not limited to the depressed part notIn the space being filled.

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