Semiconductor devices having improved adhesion and methods of fabricating the same

Semiconductor devices having improved adhesion and methods of fabricating the same

  • CN 102,947,938 A
  • Filed: 04/22/2011
  • Published: 02/27/2013
  • Est. Priority Date: 04/28/2010
  • Status: Active Application
First Claim
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1. wide bandgap semiconductor device comprises:

  • Wide band gap semiconducter layer with end face;

    A plurality of recess in the end face of this wide band gap semiconducter layer;

    AndIn described recess and the contact of the metal gate on a plurality of parts of the end face of the wide band gap semiconducter layer between the described recess.

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