Magnetic memory and its manufacture method including the functional layer in pinning layer

Magnetic memory and its manufacture method including the functional layer in pinning layer

  • CN 102,986,047 B
  • Filed: 07/14/2011
  • Issued: 04/13/2018
  • Est. Priority Date: 07/16/2010
  • Status: Active Grant
First Claim
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1. a kind of magnetic tunnel junction MTJ storage element, it includes:

  • Pinning layer stacks, it is integrated in spin transfer torque magnetoresistive random access memory STT-MRAM, the pinning layer heapFolded to be formed by multiple layers, the multiple layer includes bottom pinning layer, coupling layer and top pinning layer;

    AndFirst functional layer, it is placed in the bottom pinning layer or the top pinning layer, wherein first functional layer isForming the crystallization from tantalum strengthens functional layer.

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