A kind of CMOS image sensor optical enhancement structure and preparation method

A kind of CMOS image sensor optical enhancement structure and preparation method

  • CN 103,000,647 B
  • Filed: 10/25/2012
  • Issued: 10/16/2018
  • Est. Priority Date: 10/25/2012
  • Status: Active Grant
First Claim
Patent Images

1. a kind of CMOS image sensor optical enhancement structure, it is characterised in that:

  • It includes silicon substrate and light-sensitive element thereonWith standard CMOS multilayered structure, light-sensitive element top has the deep trench for forming light transmission space, and the zanjon groove sidewall is by metalReflecting layer is surround, and the light of the metallic reflector is incident on reflection, also has metallic reflection on the top layer of the multilayered structureLayer, to reflect at the top of multilayered structure the light being incident on inside multilayered structure, and the top layer of the multilayered structure is dielectric layer, is usedThe metal interconnecting layer in multilayered structure to be isolated with metallic reflector, meanwhile, isolated area top metal is anti-between deep trenchIt penetrates layer and is also removed a part, to avoid the series connection interference between adjacent picture elements;

    Filling transparent material is to form in the deep trenchBody of light, the transparent material are the transparent resin materials of carbon containing hydrogen, oxygen, which is formed by light penetrating object, and also to cover this moreThe metallic reflector of layer structure top layer;

    Wherein, blunt on the pixel array region being made of several light-sensitive elements by removingChange layer, so that the angle of incidence of light of pixel is become much larger, light distance becomes shorter, to improve the absorbability of light.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×