Integrated circuit and manufacturing method

Integrated circuit and manufacturing method

  • CN 103,021,982 B
  • Filed: 09/21/2012
  • Issued: 05/18/2018
  • Est. Priority Date: 09/23/2011
  • Status: Active Grant
First Claim
Patent Images

1. a kind of circuit, including:

  • Bare die with side, wherein conductive stud are directly labelled to the bare die, and extend a height compared with the side;

    First dielectric layer has the first side and the second side, is connect wherein first side of first dielectric layer is located atAt the side of the nearly bare die, so that the conductive stud lunges first dielectric layer from first side;

    First through hole extends between the second side of the conductive stud and first dielectric layer;

    AndConductive layer has the first side and the second side, wherein first side is proximally located at the institute of first dielectric layerIt states at the second side, at least a portion of the conductive layer is electrically connected to the first through hole.

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