Semiconductor device including diffusion soldered layer on sintered silver layer

Semiconductor device including diffusion soldered layer on sintered silver layer

  • CN 103,035,601 A
  • Filed: 08/22/2012
  • Published: 04/10/2013
  • Est. Priority Date: 08/22/2011
  • Status: Active Application
First Claim
Patent Images

1. semiconductor device, it comprises:

  • Substrate;

    The first sintering silver layer on the substrate;

    The first semiconductor chip;

    AndThe first semiconductor chip is coupled to the first Diffusion Welding layer of the first sintering silver layer.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×