Crystalline silicon ingot and method of fabricating the same

Crystalline silicon ingot and method of fabricating the same

  • CN 103,088,420 A
  • Filed: 11/08/2012
  • Published: 05/08/2013
  • Est. Priority Date: 11/28/2011
  • Status: Active Application
First Claim
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1. silicon crystal ingot, have a bottom and a vertical direction, it is characterized in that, described silicon crystal ingot comprises a plurality of silicon crystal grains and of growing up along described vertical direction and is arranged on a nucleation promoting layer of described bottom, and the average grain size of silicon crystal grain that is close to described nucleation promoting layer is for less than 10mm.

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