Method and system for depositing a thin-film transistor

Method and system for depositing a thin-film transistor

  • CN 103,098,218 A
  • Filed: 08/31/2011
  • Published: 05/08/2013
  • Est. Priority Date: 09/10/2010
  • Status: Active Application
First Claim
Patent Images

1. method that is used for forming in substrate (102,202,730) top thin-film transistor gate insulator (100,200,734), described substrate is arranged in treatment chamber (104,204), and described method comprises:

  • To process gas (116,216) and introduce, to produce plasma in described treatment chamber (104,204);

    Described substrate (102,202,730) is heated to processing substrate temperature between 50 ℃ and

    350 ℃

    ;

    AndCome at cvd silicon oxide, silicon oxynitride or silicon nitride above the described substrate (102,202,730) of heating by sputter target assemblies (108,206) under intermediate frequency.

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