Method for manufacturing sputtering target and method for manufacturing semiconductor device

Method for manufacturing sputtering target and method for manufacturing semiconductor device

  • CN 103,132,030 A
  • Filed: 11/29/2012
  • Published: 06/05/2013
  • Est. Priority Date: 11/29/2011
  • Status: Active Application
First Claim
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1. the manufacture method of a sputtering target material, comprise the steps:

  • A plurality of metal oxides are carried out the first roasting, to form crystallization;

    Described crystallization is pulverized be powder;

    Described powder and zinc oxide are carried out the second roasting, to form sintered compact;

    Described sintered compact is carried out mechanical workout, to form target;

    Described target is carried out heat treated;

    AndDescribed target is fitted to backing plate.

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