Magnetic multi-layer film hall element and preparation method thereof

Magnetic multi-layer film hall element and preparation method thereof

  • CN 103,137,850 B
  • Filed: 02/21/2013
  • Issued: 05/31/2017
  • Est. Priority Date: 02/21/2013
  • Status: Active Grant
First Claim
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1. a kind of magnetoresistance effect of magnetic multi-layer film hall element, including composite layered structure, the magnetoresistance effect includesAt least one elementary cell, each elementary cell include nonmagnetic metal compound layer MO, magnetic metal material layer FM andNonmagnetic material layer NM, wherein, in the elementary cell, the nonmagnetic metal compound layer MO and described non magneticMetal material layer NM is separately positioned on the both sides of the magnetic metal material layer FM;

  • The nonmagnetic material layer NM is by being selected fromThe metal of one of Ta, Hf, Zr, Mo, Nb and W is formed, or by comprising Ta, Hf, Zr, Mo, Nb and W wherein at least one elementAlloy formed;

    The magnetic metal material layer FM is formed by the magnetic alloy containing B element.

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