Epitaxially coated semiconductor wafer

Epitaxially coated semiconductor wafer

  • CN 103,147,124 A
  • Filed: 10/30/2007
  • Published: 06/12/2013
  • Est. Priority Date: 11/22/2006
  • Status: Active Application
First Claim
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1. the semiconductor wafer that comprises front and the back side, have on its front according to the stressless epitaxial film of photoelastic stress measurement method (" SIRD "), square measurement window take area as 2mm * 2mm is benchmark in addition, this semiconductor wafer have on its back side be expressed as height change PV(" peak is to paddy ") more than or equal to 2 nanometers and be less than or equal to the nanotopography of 5 nanometers, and the back side " haloing " that is expressed as optical haze is more than or equal to 0.1ppm and be less than or equal to 5ppm.

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