Monitoring structure and monitoring method for silicon wet etching depth

Monitoring structure and monitoring method for silicon wet etching depth

  • CN 103,165,579 A
  • Filed: 12/13/2011
  • Published: 06/19/2013
  • Est. Priority Date: 12/13/2011
  • Status: Active Application
First Claim
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1. the monitoring structure of a silicon wet etching degree of depth, is characterized in that, comprising:

  • be formed at least two wet etching grooves on single crystal silicon material;

    Described wet etching groove end face is rectangle, wherein has at least the end face width of two wet etching grooves to be respectively W uAnd W l, W u=d u/ 0.71, W l=d l/ 0.71, d uBe the wet etching degree of depth maximum that to monitor, d lBe the wet etching deep minimum that to monitor.

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