Fin field effect transistor and technology thereof

Fin field effect transistor and technology thereof

  • CN 103,325,683 A
  • Filed: 03/23/2012
  • Published: 09/25/2013
  • Est. Priority Date: 03/23/2012
  • Status: Active Application
First Claim
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1. fin-shaped field-effect transistor technique comprises:

  • Substrate is provided;

    Form the first fin-shaped field-effect transistor and the second fin-shaped field-effect transistor in this substrate, wherein this first fin-shaped field-effect transistor comprises the first metal layer, and this second fin-shaped field-effect transistor comprises the second metal level;

    AndCarry out treatment process in this first metal layer, to change the limit voltage of this first fin-shaped field-effect transistor.

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