The method for manufacturing the sapphire single crystal ingot of resistance heating

The method for manufacturing the sapphire single crystal ingot of resistance heating

  • CN 103,328,695 B
  • Filed: 12/21/2011
  • Issued: 12/26/2017
  • Est. Priority Date: 01/19/2011
  • Status: Active Grant
First Claim
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1. a kind of method for the sapphire single crystal ingot for manufacturing resistance heating, methods described include:

  • Polycrystal alumina is loaded in the crucible included in the chamber;

    The crucible is heated so that the polycrystal alumina turns into aluminum oxide fused mass, the electricity by the heater of resistance heatingThe heater of resistance heating is arranged in the outside of the crucible and the lower section of the crucible;

    Contact crystal seed and the upper part of the aluminum oxide fused mass;

    Sapphire single crystal ingot is grown by the aluminum oxide fused mass;

    By the sapphire single crystal ingot of post-heater heat growth;

    The sapphire single crystal ingot of growth is set to be separated with the aluminum oxide fused mass;

    Wherein, the step of by the aluminum oxide fused mass to grow the sapphire single crystal ingot, includes:

    Crystal seed is lifted to lift the sapphire single crystal ingot,Make the crystal seed rotation to rotate the sapphire single crystal ingot,The crucible is rotated along the direction opposite with the direction of rotation of the sapphire single crystal ingot, while make to join in the crucibleKeep constant with the ratio of sapphire single crystal ingot rotation and the angular momentum for the aluminum oxide fused mass for participating in the crucible rotation;

    The crucible is set to increase according to the density ratio of the crystal of the sapphire single crystal ingot;

    The magnetic field of tip magnet is applied to the aluminum oxide fused mass in the crucible;

    Wherein, by being applied to the ratio between the upper coil of the tip magnet and the first electric current of lower coil and the second electric currentRegulation is 1;

    0.5 to 1;

    In the range of 2 so that zero Gaussian plane is reduced to 105mm from 40mm, and makes crystal seed rotating ring (SR-Ring) Lorentz force increase,Wherein, MsMc is maintained in the range of 0.1 to 0.5 by using following equalities 1 and 2:

    [equation 1]Volume=Vs/Vcs of the DS than volume/crucible rotation ring of=crystal seed rotating ringWherein, ratios of the DS than the volume for SR- rings and the volume of crucible rotation ring (CR- rings);

    [equation 2]The angular momentum of the angular momentum of MsMc=crystal seed rotating rings/crucible rotation ring=Vs Φ

    s, m/Vc Φ

    c, mWherein, MsMc is the ratio of the angular momentum and the angular momentum of CR- rings of SR- rings, and Φ

    s, m are the maximum angular at SR- rings centerSpeed, and Φ

    c, m are the maximum angular rate at CR- rings center.

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