Memory devices having source lines directly coupled to body regions and methods

Memory devices having source lines directly coupled to body regions and methods

  • CN 103,329,270 A
  • Filed: 01/19/2012
  • Published: 09/25/2013
  • Est. Priority Date: 01/21/2011
  • Status: Active Grant
First Claim
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1. storage arrangement, it comprises:

  • The slender body zone, it has the source region of being coupled to first end and the drain region of being coupled to the second end;

    A plurality of grids, it is along the length in described slender body zone, each person of described a plurality of grids be by at least one charge storage structure with described slender body region disconnecting;

    AndSource electrode line, it is directly coupled to described body regions.

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