Method for forming trenches in substrate

Method for forming trenches in substrate

  • CN 103,367,224 A
  • Filed: 03/31/2012
  • Published: 10/23/2013
  • Est. Priority Date: 03/31/2012
  • Status: Active Application
First Claim
Patent Images

1. method that forms groove in substrate comprises:

  • One substrate is provided;

    Form one first patterned mask layer at this substrate, this first patterned mask layer has one first groove;

    Form a material layer on this substrate, this material layer conformally forms along a bottom surface and at least one sidewall of this first groove comprehensively;

    Form one second patterned mask layer at this material layer, this second patterned mask layer is filled up this first groove;

    Remove this material layer of part, and keep this material layer between this second patterned mask layer and this substrate, so that form at least one the second groove between this first patterned mask layer and this second patterned mask layer;

    AndAfter forming this second groove, carry out an etching process take this first patterned mask layer and this second patterned mask layer as mask.

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