SOI Wafer, manufacturing method therefor, and MEMS device

SOI Wafer, manufacturing method therefor, and MEMS device

  • CN 103,377,983 A
  • Filed: 12/11/2012
  • Published: 10/30/2013
  • Est. Priority Date: 04/24/2012
  • Status: Active Application
First Claim
Patent Images

1. SOI wafer is fitted each other and is consisted of across oxide-film by 2 Silicon Wafers, it is characterized in that, comprising:

  • The cavity that forms at the binding face of a slice Silicon Wafer at least;

    AndThe absorption material that forms at the face of an opposite side with described binding face.

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