Semiconductor device with self-aligned interconnects

Semiconductor device with self-aligned interconnects

  • CN 103,378,054 A
  • Filed: 10/12/2012
  • Published: 10/30/2013
  • Est. Priority Date: 04/11/2012
  • Status: Active Application
First Claim
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1. multilayer device comprises:

  • Substrate;

    The first interlayer dielectric (ILD) layer is arranged on described substrate top;

    The first conductive layer comprises many first conductor wires, and described the first conductive layer is formed in the described ILD layer;

    The 2nd ILD layer is arranged on described ILD layer top;

    AndThe second conductive layer comprises many second conductor wires, and described the second conductive layer is formed in described the 2nd ILD layer,Wherein, at least one conductor wire in contiguous described many first conductor wires of at least one conductor wire in described many second conductor wires forms,Wherein, at least one conductor wire of at least one conductor wire in described many second conductor wires in contacting at the interface described many first conductor wires, andWherein, in the situation of not using through hole, described interface in described many second conductor wires at least one conductor wire and at least one conductor wire in described many first conductor wires between provide and electrically contact.

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