Semiconductor gas sensor and its manufacture method

Semiconductor gas sensor and its manufacture method

  • CN 103,424,458 B
  • Filed: 05/10/2013
  • Issued: 12/26/2017
  • Est. Priority Date: 05/22/2012
  • Status: Active Grant
First Claim
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1. a kind of semiconductor gas sensor, it is characterised in that possess:

  • (a) semiconductor layer;

    (b) gate insulating film being formed on the semiconductor layer;

    (c) crystalline film being formed on the gate insulating film;

    (d) gate electrode being formed in the crystalline film;

    (e) it is formed at the source region of the semiconductor layer;

    With(f) drain region of the semiconductor layer is formed at,The crystalline film includes region and the TiOx crystallizations for the amorphous Ti for mixing oxygen,TiOx crystallizations ratio shared in the crystalline film is more than 50%, less than 100%,The gate electrode has platinum film or iridium film, and the platinum film or the iridium film are made up of multiple crystal grain, in the multipleOxygen and titanium be present in the grain boundary area between crystal grain,Wherein, after forming the gate insulating film, before the formation crystalline film, it is diluted as in hydrogen concentration or deuterium concentrationIn 0.1%~3.5% atmosphere, the hydrogen annealing that heat treatment temperature is 380 DEG C~1000 DEG C is carried out.

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