Semiconductor structure and its formation method

Semiconductor structure and its formation method

  • CN 103,474,350 A
  • Filed: 06/06/2012
  • Published: 12/25/2013
  • Est. Priority Date: 06/06/2012
  • Status: Active Application
First Claim
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1. the formation method of a semiconductor structure, is characterized in that, comprising:

  • Semiconductor substrate is provided;

    Form grid on described Semiconductor substrate;

    Form up-narrow and down-wide side wall in described grid both sides;

    Form stressor layers in described Semiconductor substrate, side wall and gate surface.

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