Semiconductor light-emitting elements and light emitting device

Semiconductor light-emitting elements and light emitting device

  • CN 103,490,000 B
  • Filed: 06/13/2013
  • Issued: 06/07/2019
  • Est. Priority Date: 06/13/2012
  • Status: Active Grant
First Claim
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1. a kind of semiconductor light-emitting elements, comprising:

  • Light emitting structure, the light emitting structure include the first conductive type semiconductor layer, active layer and the second conductive type semiconductorLayer;

    First electrode structure, the first electrode structure include multiple conductive paths and first electrode connecting component, the multipleConductive path pass through the second conductive type semiconductor layer and the active layer and with first conductive type semiconductorLayer connection, the first electrode connecting component are connected to the multiple conductive path;

    Second electrode structure, the second electrode structure include the second electrode lay and second electrode connecting component, second electricityPole layer is formed directly on the second conductive type semiconductor layer, and the second electrode connecting component is arranged in second electricityPole layer is upper and is formed by material identical with first electrode connecting component;

    Insulating element, the insulating element, which covers the first electrode structure and the second electrode structure and has, to be exposedThe open area of a part of the first electrode structure and the second electrode structure;

    AndFirst pad electrode and the second pad electrode, first pad electrode and second pad electrode are respectively formed at logicalIt crosses on the part of the first electrode structure and the second electrode structure that the open area is exposed, first welderingDisc electrode and second pad electrode are connect with the first electrode structure and the second electrode structure respectively,Wherein, the first electrode structure is arranged in below second pad electrode, andWherein, the multiple conductive path and the second electrode lay are formed in the first processing, the first electrode interconnecting piecePart and the second electrode connecting component are formed in the second processing for being different from the first processing, so that the first electrode connectsRelay part can be formed by the material different from the multiple conductive path, and the second electrode connecting component can by withThe different material of the second electrode lay is formed.

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