Preparation method of nanopore chip with plasmon resonance scattering response function

Preparation method of nanopore chip with plasmon resonance scattering response function

  • CN 103,512,869 A
  • Filed: 10/11/2013
  • Published: 01/15/2014
  • Est. Priority Date: 10/11/2013
  • Status: Active Application
First Claim
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1. a preparation method with the nano-pore chip of plasma resonance scattering response, is characterized in that, its step comprises:

  • (1) selection of chip substratesChip substrates selects thick 100~

    500 silicon chip, at the insulating material of the positive deposition of thick 5~

    150nm of described silicon chip, described insulating material is a kind of of silicon nitride, aluminium oxide or silicon dioxide;

    Reverse side at described silicon chip does not have insulating material;

    (2) making of chipUtilize wet etching method in length of side 100~

    500 of reverse side etching of the described silicon chip of step (1) square area, till etching into insulation material layer, the square area after etching is nano-pore chip film always;

    (3) nano-pore etchingUtilize the described nano-pore chip film of focused ion beam or focused beam implant steps (2), make to form nanometer aperture on described nano-pore chip film, the aperture of described aperture is at 20~

    100nm;

    (4) noble metal decoratedUtilizing magnetic control sputtering device is 1-40 W/cm at vacuum tightness 0.1-10 Pa, power 2condition under to nanometer aperture plated film step (3) Suo Shu 5~

    30 minutes, thereby the described nano-pore chip film surface of the step of making (2) plates the layer of precious metal that one deck 10~

    50nm is thick;

    The target of described noble metal decorated employing is gold or silver or copper.

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