Methods of manufacturing semiconductor devices

Methods of manufacturing semiconductor devices

  • CN 103,545,248 A
  • Filed: 10/15/2012
  • Published: 01/29/2014
  • Est. Priority Date: 07/11/2012
  • Status: Active Application
First Claim
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1. manufacture a method for semiconductor device, described method comprises:

  • On workpiece, form material layer, described workpiece comprise first, second portion and be arranged on described first and described second portion between hard mask;

    Material layer described in patterning;

    On the sidewall of patterned material layer, form the first distance piece;

    Remove described patterned material layer;

    Described the first distance piece is carried out to the described second portion of workpiece described in patterning as etching mask;

    Remove described the first distance piece;

    On the sidewall of the patterning second portion of described workpiece, form the second distance piece;

    Remove the described patterning second portion of described workpiece;

    Described the second distance piece is carried out to the described hard mask of workpiece described in patterning as etching mask;

    AndDescribed hard mask is come to the described first of workpiece described in patterning as etching mask.

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