Bump i/o contact for semiconductor device

Bump i/o contact for semiconductor device

  • CN 103,560,118 A
  • Filed: 09/23/2008
  • Published: 02/05/2014
  • Est. Priority Date: 10/11/2007
  • Status: Active Application
First Claim
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1. For in the situation that not using electrical lead by suprabasil conductor and a bump contact body that is installed to the contact pad electrical connection on the semiconductor device of described substrate, described bump contact body comprises:

  • A. conductive pole, it is first and second extreme that described conductive pole has, and the described first end of described post is realized described post to electrical contact and the mechanical attachment of the described contact pad on described semiconductor device, and wherein said post is outwards outstanding from described semiconductor device;

    B. scolder is preced with, it is first and second extreme that described scolder hat has, it is the different solder element from described post physical alignment and assembling that described scolder is preced with, the described first end of wherein said scolder hat is towards described second end of described post, at predetermined temperature, described scolder is preced with to Reflow Soldering, thereby to realize described second end of described scolder hat and electrical contact and the mechanical attachment of described suprabasil described conductor, described semiconductor device is carried out Flip-Chip Using and makes described semiconductor device and described substrate electrical couplings via described bump contact body;

    AndC. diffusion impervious layer, described diffusion impervious layer electrically and is mechanically attached to the described first end of described solder bump described second end of described post, the electromigration in the described first end that described diffusion impervious layer opposing is preced with to described scolder by the chemical composition of the selection of described post.

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