Plasma film forming apparatus and plasma film forming method

Plasma film forming apparatus and plasma film forming method

  • CN 103,597,115 A
  • Filed: 08/30/2011
  • Published: 02/19/2014
  • Est. Priority Date: 08/30/2011
  • Status: Active Application
First Claim
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1. a plasma film forming apparatus, have with by high-frequency electrode in opposite directions of film forming matter and with the described ground-electrode being connected by film forming matter, the plasma body that use occurs between described high-frequency electrode and described ground-electrode is carried out film forming to described by film forming matter, described plasma film forming apparatus is characterised in thatDescribed high-frequency electrode has:

  • The 1st high-frequency electrode, with described by film forming matter the 1st by film forming face in opposite directions;

    AndThe 2nd high-frequency electrode, with described by film forming matter with the described the 1st by the contrary side of film forming face the 2nd by film forming face in opposite directions,Described the 1st high-frequency electrode, described the 2nd high-frequency electrode and described ground-electrode make by the plasma body between described the 2nd high-frequency electrode of the film forming of film forming face and described ground-electrode, to be occurred by the plasma body between described the 1st high-frequency electrode of the film forming of film forming face and described ground-electrode with for the described the 2nd for the described the 1st simultaneously.

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