SiC (Silicon Carbide) material cleaning method

SiC (Silicon Carbide) material cleaning method

  • CN 103,681,246 A
  • Filed: 12/30/2013
  • Published: 03/26/2014
  • Est. Priority Date: 12/30/2013
  • Status: Active Grant
First Claim
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1. a SiC material cleaning method, described method comprises that the SiC material carrying out is successively containing the oxidation of oxygen hybrid plasma, oxide-film removal, conventional inorganic cleaning and conventional organic washing step, it is characterized in that, at SiC material, containing increasing in oxygen hybrid plasma oxidizing process, contain oxygen hybrid plasma, described containing oxygen hybrid plasma bombardment SiC material surface, by controlling opening of Si-C key, increase the probability that oxidation reaction occurs for oxygen plasma gas and Si, at SiC material surface, obtain oxide film.

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