Formation method of fin field-effect transistor (FinFET) substrates with different threshold voltages

Formation method of fin field-effect transistor (FinFET) substrates with different threshold voltages

  • CN 103,681,326 A
  • Filed: 09/05/2012
  • Published: 03/26/2014
  • Est. Priority Date: 09/05/2012
  • Status: Active Application
First Claim
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1. a formation method with the fin field effect pipe FinFET matrix of different threshold voltages, the method comprises:

  • Provide in advance a surface deposition to have the Semiconductor substrate of cushion oxide layer;

    On the surface of cushion oxide layer, form the photoresistance glue-line of patterning;

    With the photoresistance glue-line of patterning for covering, the region appearing at the photoresistance glue-line of patterning, see through cushion oxide layer with predetermined close Implantation Ge element to Semiconductor substrate, and remove the photoresistance glue-line of described patterning;

    Photoresistance glue-line with patterning appears zones of different, repeats above-mentioned steps N time, and the germanium ion that forms variable concentrations in Semiconductor substrate zones of different distributes, and N is more than or equal to 1 integer;

    At described cushion oxide layer surface deposition hard mask layer, on the surface of described hard mask layer, again form the photoresistance glue-line of patterning, the width of each matrix of zone definitions that the photoresistance glue-line of the patterning again forming covers;

    The photoresistance glue-line of the patterning that again forms of take is mask, and etching hard mask layer, cushion oxide layer and be injected with the Semiconductor substrate of germanium ion, form a plurality of FinFET matrixes with different germanium ion concentration successively.

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