Low-temperature polycrystalline silicon film, low-temperature polycrystalline silicon film preparation method, film transistor and display device

Low-temperature polycrystalline silicon film, low-temperature polycrystalline silicon film preparation method, film transistor and display device

  • CN 103,681,776 A
  • Filed: 12/24/2013
  • Published: 03/26/2014
  • Est. Priority Date: 12/24/2013
  • Status: Active Grant
First Claim
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1. a preparation method for low-temperature polysilicon film, is characterized in that, the method comprises:

  • On substrate, form resilient coating;

    By composition technique, on the resilient coating of described substrate, form the figure of amorphous silicon layer, wherein, described amorphous silicon layer comprises a plurality of bulge-structures and is positioned at the etch areas that the part of a plurality of described bulge-structure surroundings is etched away;

    Described amorphous silicon layer is carried out to Excimer-Laser Crystallization, obtain low-temperature polysilicon film.

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