The method and minicrystal growth furnace of the GIXRD technologies crystal growth boundary layer microstructure of measurement in real time in situ

The method and minicrystal growth furnace of the GIXRD technologies crystal growth boundary layer microstructure of measurement in real time in situ

  • CN 103,698,348 B
  • Filed: 12/16/2013
  • Issued: 04/27/2018
  • Est. Priority Date: 12/16/2013
  • Status: Active Grant
First Claim
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1. A kind of 1. method of GIXRD technologies crystal growth boundary layer microstructure of measurement in real time in situ, it is characterised in that:

  • This methodBased on GIXRD technologies, the film in situ that glancing incidence crystal upper surface is melted in real time, the X-ray for measuring film different depth are spread out respectivelyPenetrate spectrum, so as to obtain the degree of order of melt during crystal growth, boundary layer and crystal, and then obtain these regions microstructure andCorresponding changing rule;

    It is comprised the following steps that:

    A, the crystal prototype polished is put into the crucible of minicrystal growth furnace, crystal upper surface is kept basic horizontal;

    AgainMinicrystal growth furnace is put on the platform at synchrotron radiation X-ray grazing-incidence diffraction line station, fine tuning micro furnace position, penetrates XLine, to crystal upper surface, is then shut off X-ray source with special angle glancing incidence;

    B, cooling water system and electric heater are opened, by electric heater, makes crystal upper surface melt to form thin film, filmThickness by the Power Control of electric heater, be allowed to be formed the three parts region of melt, boundary layer and crystal from top to down;

    C, X-ray source is opened, fine setting incidence angle size glancing incidence is collected below film surface at the different depth of filmThe difraction spectrum of the melt of different depth, boundary layer and crystal, and then obtain their microstructure information.

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