Method for forming silicon oxynitride film, and substrate having silicon oxynitride film produced using this formation method

Method for forming silicon oxynitride film, and substrate having silicon oxynitride film produced using this formation method

  • CN 103,702,933 A
  • Filed: 06/22/2011
  • Published: 04/02/2014
  • Est. Priority Date: 06/22/2011
  • Status: Active Application
First Claim
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1. form a silicon oxynitride membrane method, it comprises:

  • Application step, wherein will comprise can being applied on substrate surface to form coating by film forming coatings composition of polysilazane compounds;

    Drying step, wherein that described coating is dry to remove excessive solvent wherein;

    WithUviolizing step, the wherein coating of use uviolizing drying at the temperature lower than 150 ℃

    .

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