Method of manufacturing a semiconductor device and semiconductor device

Method of manufacturing a semiconductor device and semiconductor device

  • CN 103,715,084 A
  • Filed: 08/22/2013
  • Published: 04/09/2014
  • Est. Priority Date: 09/28/2012
  • Status: Active Application
First Claim
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1. a method of manufacturing semiconductor device, comprising:

  • On substrate, stack gradually and form electronics and get over layer, electron supply layer, etching stopping layer and p-type film;

    described p-type film is formed by the nitride semi-conductor material doped with realizing the impurity element of p-type that comprises Al, and described etching stopping layer is formed by the material that comprises GaN;

    By dry etching, remove the described p-type film in the region the region except gate electrode to be formed;

    to form p-type layer in the region of described gate electrode to be formed;

    during plasma emission in observing described dry etching, carry out described dry etching;

    after described dry etching starts;

    when not observing the plasma emission that is derived from Al, stop described dry etching;

    AndOn described p-type layer, form described gate electrode.

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