Oxide thin-film transistor, manufacturing method of array substrate and display device

Oxide thin-film transistor, manufacturing method of array substrate and display device

  • CN 103,715,266 A
  • Filed: 12/25/2013
  • Published: 04/09/2014
  • Est. Priority Date: 12/25/2013
  • Status: Active Application
First Claim
Patent Images

1. an oxide thin film transistor, comprises gate electrode, gate insulation layer, oxide active layer pattern, source electrode and drain electrode, it is characterized in that, source electrode and drain electrode are positioned at the below of oxide active layer pattern;

  • Gate electrode is positioned at source electrode and drain electrode below;

    Gate insulation layer is between gate electrode and source electrode, drain electrode.

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