Light emitting diode and method of manufacturing same

Light emitting diode and method of manufacturing same

  • CN 103,733,360 A
  • Filed: 08/07/2012
  • Published: 04/16/2014
  • Est. Priority Date: 08/11/2011
  • Status: Active Application
First Claim
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1. the manufacture method of a light-emitting diode, on substrate, to there is successively the manufacture method of light-emitting diode that reflector, compartment of terrain are embedded with the hyaline membrane of a plurality of Ohm contact electrodes and comprise successively the compound semiconductor layer of current-diffusion layer and luminescent layer, it is characterized in that having successively:

  • In growth, with formation on substrate, comprise successively the operation of the compound semiconductor layer of luminescent layer and current-diffusion layer;

    On described current-diffusion layer, form the operation of a plurality of Ohm contact electrodes of compartment of terrain configuration;

    On described current-diffusion layer, so that the circumference among the surface of described a plurality of Ohm contact electrodes forms the operation of hyaline membrane in the mode exposing outside;

    On described hyaline membrane and form the operation in reflector in the part of exposing of described Ohm contact electrode;

    On described reflector, form the operation of knitting layer;

    The operation of bonded substrate on described knitting layer;

    WithRemove the operation of substrate for described growth.

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