Method for growing high-quality gallium nitride (GaN) crystals by using graphene or graphene oxide

Method for growing high-quality gallium nitride (GaN) crystals by using graphene or graphene oxide

  • CN 103,741,220 A
  • Filed: 01/20/2014
  • Published: 04/23/2014
  • Est. Priority Date: 01/20/2014
  • Status: Active Application
First Claim
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1. a method of utilizing Graphene or graphene oxide growing high-quality gallium nitride, is characterized in that, comprises the following steps:

  • (1) the graphene nanometer sheet dispersion liquid that compound concentration is 0.005-0.1mg/ml, or the concentration stannic oxide/graphene nano sheet dispersion liquid that is 0.001-0.02mg/ml;

    Graphene nanometer sheet dispersion liquid is that graphene nanometer sheet is dispersed in DMF or N-Methyl pyrrolidone;

    Stannic oxide/graphene nano sheet dispersion liquid is that stannic oxide/graphene nano sheet is dispersed in ultrapure water;

    (2) the graphene nanometer sheet dispersion liquid preparing or stannic oxide/graphene nano sheet dispersion liquid are directly applied on the substrate for the preparation of GaN crystal, stand-by after drying, furnace drying method is 80 ℃

    of-200 ℃

    of dry 1-8 hour in vacuum drying oven;

    (3) substrate preparing is put into hydride gas-phase epitaxy system and carry out GaN crystal epitaxy.

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