Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

  • CN 103,779,213 A
  • Filed: 10/18/2012
  • Published: 05/07/2014
  • Est. Priority Date: 10/18/2012
  • Status: Active Application
First Claim
Patent Images

1. a manufacture method for semiconductor device, is characterized in that, described method comprises:

  • Step S101;

    the Semiconductor substrate that the grid structure that is formed with PMOS is provided;

    Step S102;

    the both sides at the grid structure of described PMOS form grid the first side wall;

    Step S103;

    take described grid the first side wall as mask, described Semiconductor substrate is carried out to etching, form the first groove in the both sides of the grid structure of described PMOS;

    Step S104;

    form the first germanium silicon layer in described the first groove;

    Step S105;

    the both sides at described grid the first side wall form grid the second sidewall;

    Step S106;

    take described grid the second sidewall as mask, described the first germanium silicon layer is carried out to etching, form the second groove in described the first germanium silicon layer;

    Step S107;

    form the second germanium silicon layer in described the second groove.

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