SiGeSn layer of selected area and method for forming SiGeSn layer of selected area

SiGeSn layer of selected area and method for forming SiGeSn layer of selected area

  • CN 103,839,786 A
  • Filed: 02/25/2014
  • Published: 06/04/2014
  • Est. Priority Date: 02/25/2014
  • Status: Active Application
First Claim
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1. a formation method for constituency SiGeSn layer, is characterized in that, comprises the following steps:

  • Provide top to there is the substrate of Ge layer;

    Form mask on described Ge layer surface, and form opening on described mask;

    Inject the atom, molecule, ion or the plasma that contain Si and Sn element to described Ge layer top layer, to form SiGeSn layer at aperture position simultaneously.

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