Manufacturing method of N type MOSFET

Manufacturing method of N type MOSFET

  • CN 103,855,012 A
  • Filed: 11/30/2012
  • Published: 06/11/2014
  • Est. Priority Date: 11/30/2012
  • Status: Active Application
First Claim
Patent Images

1. a manufacture method of N-type MOSFET, described method comprises:

  • In Semiconductor substrate, form a part of MOSFET, the described part of described MOSFET comprises source/drain region in Semiconductor substrate, at the false gate stack between source/drain region above Semiconductor substrate and the grid curb wall around false gate stack;

    Remove the false gate stack of described MOSFET to form gate openings, the surface of this gate openings exposing semiconductor substrate;

    On semi-conductive exposed surface, form interfacial oxide layer;

    On interfacial oxide layer in gate openings, form high-K gate dielectric;

    On high-K gate dielectric, form the first metal gate layer;

    Dopant implant ion in the first metal gate layer;

    On the first metal gate layer, form the second metal gate layer to fill gate openings;

    AndAnneal so that the ion that adulterates spreads and accumulates in upper interface between high-K gate dielectric and the first metal gate layer and the lower interface between high-K gate dielectric and interfacial oxide, and lower interface between high-K gate dielectric and interfacial oxide produces electric dipole by interfacial reaction.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×