Manufacturing method of N type MOSFET

Manufacturing method of N type MOSFET

  • CN 103,855,013 A
  • Filed: 11/30/2012
  • Published: 06/11/2014
  • Est. Priority Date: 11/30/2012
  • Status: Active Application
First Claim
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1. a manufacture method of N-type MOSFET, described method comprises:

  • In Semiconductor substrate, limit the active area of N-type MOSFET;

    On the surface of Semiconductor substrate, form interfacial oxide layer;

    On interfacial oxide layer, form high-K gate dielectric layer;

    On high-K gate dielectric layer, form metal gate layer;

    Dopant implant ion in metal gate layer;

    On metal gate layer, form polysilicon layer;

    Polysilicon layer, metal gate layer, high-K gate dielectric layer and interfacial oxide layer are patterned as to gate stack;

    Form the grid curb wall around gate stack;

    AndForm source/drain region,Wherein, at the activation During Annealing that forms source/drain region, make the doping ion in metal gate spread and accumulate in the lower interface between upper interface and high-K gate dielectric layer and the interfacial oxide between high-K gate dielectric layer and metal gate layer, and lower interface between high-K gate dielectric layer and interfacial oxide produce electric dipole by interfacial reaction.

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