Finned field effect transistor with SiGeSn channels and forming method thereof

Finned field effect transistor with SiGeSn channels and forming method thereof

  • CN 103,855,033 A
  • Filed: 02/25/2014
  • Published: 06/11/2014
  • Est. Priority Date: 02/25/2014
  • Status: Active Application
First Claim
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1. a formation method with the fin formula field effect transistor of SiGeSn raceway groove, is characterized in that, comprises the following steps:

  • Substrate is provided;

    On described substrate, form SiGe fin structure;

    Inject the atom, molecule, ion or the plasma that contain Sn element to described SiGe fin structure, to form SiGeSn layer;

    On described SiGeSn layer, form grid stacked structure.

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