Finned field effect transistor with SiGeSn channels and forming method thereof
Finned field effect transistor with SiGeSn channels and forming method thereof
- CN 103,855,033 A
- Filed: 02/25/2014
- Published: 06/11/2014
- Est. Priority Date: 02/25/2014
- Status: Active Application
- EN CH
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- Pin
