Interconnection structure and manufacturing method for same

Interconnection structure and manufacturing method for same

  • CN 103,871,959 A
  • Filed: 12/17/2012
  • Published: 06/18/2014
  • Est. Priority Date: 12/17/2012
  • Status: Active Application
First Claim
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1. a manufacture method for interconnection structure, is characterized in that, comprising:

  • In substrate, form the dielectric layer of carbon containing;

    Adopt gas siliceous, hydrogen to carry out surface treatment to described dielectric layer, to be formed for suppressing the protective layer of carbon loss;

    On described protective layer, form hard mask;

    With described hard mask, described dielectric layer is carried out graphically, to form attachment plug.

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