Wideband low noise amplifier

Wideband low noise amplifier

  • CN 103,888,083 B
  • Filed: 03/20/2014
  • Issued: 06/19/2018
  • Est. Priority Date: 03/20/2014
  • Status: Active Grant
First Claim
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1. a kind of wideband low noise amplifier, it is characterised in that the wideband low noise amplifier includes:

  • First bipolar transistor(Q1), the second bipolar transistor (Q2), third bipolar transistor (Q3), the 4th bipolar transistor (Q4), the 5th is bipolarTransistor npn npn (Q5), the 6th bipolar transistor (Q6), the 7th bipolar transistor (Q7), the first metal-oxide-semiconductor (M1), the 2nd MOSIt manages (M2), first resistor (R1), second resistance (RC1), 3rd resistor (RB2), the 4th resistance (RC2), the 5th resistance (RE2), the 6thResistance (RC3), the 7th resistance (RE4), the 8th resistance (RC5), the 9th resistance (RE5), the first capacitance (C1), the second capacitance (CE4),Third capacitance (CE5), the 4th capacitance (CB6), wherein:

    The base stage of first bipolar transistor (Q1) connects 3rd resistor simultaneously(RB2) first end and the second bipolar transistor (Q2) collector, the emitter of the first bipolar transistor (Q1) is simultaneouslyThe first end of the base stage of the 4th bipolar transistor (Q4), the first end of first resistor (R1) and the first capacitance (C1) is connected,The collector connection second resistance (R of first bipolar transistor (Q1)C1) first end and third bipolar transistor (Q3)Base stage;

    The base stage connection 3rd resistor (R of second bipolar transistor (Q2)B2) second end, the second bipolar transistor(Q2) emitter connects the 5th resistance (RE2) first end, the collector of the second bipolar transistor (Q2) connects the 4th resistance(RC2) first end;

    The collector of third bipolar transistor (Q3) connects the 6th resistance (R simultaneouslyC3) first end, the 4th pairThe base stage of the collector of bipolar transistor (Q4) and the 5th bipolar transistor (Q5);

    The hair of 4th bipolar transistor (Q4)Emitter-base bandgap grading connects the 7th resistance (R simultaneouslyE4) first end and the second capacitance (CE4) first end;

    5th bipolar transistor(Q5) emitter connects the 9th resistance (R simultaneouslyE5) first end and third capacitance (CE5) first end;

    5th is ambipolarThe collector of transistor (Q5) connects the 8th resistance (R simultaneouslyC5) first end and the 4th capacitance (CB6) first end, the 4thCapacitance (CB6) second end simultaneously connect the 6th bipolar transistor (Q6) base stage, the 7th bipolar transistor (Q7) transmittingPole and the drain electrode of the first metal-oxide-semiconductor (M1);

    The collector of 6th bipolar transistor (Q6) connects the 7th bipolar transistor simultaneouslyManage the base stage of (Q7) and the source electrode of the first metal-oxide-semiconductor (M1);

    The grid of first metal-oxide-semiconductor (M1) and the grid of the second metal-oxide-semiconductor (M2)The first variable voltage source and the second variable voltage source are connected respectively;

    4th resistance (RC2) second end, second resistance (RC1)Two ends, the 6th resistance (RC3) second end, the 8th resistance (RC5) second end, the 7th bipolar transistor (Q7) collectorAnd second metal-oxide-semiconductor (M2) drain electrode all connect 3.3V supply voltage VCC

    5th resistance (RE2) second end, third it is bipolarThe emitter of transistor npn npn (Q3), the second end of first resistor (R1), the second end of the first capacitance (C1), the 7th resistance (RE4)Second end, the second capacitance (CE4) second end, the 9th resistance (RE5) second end, third capacitance (CE5) second end, firstThe emitter of the source electrode of metal-oxide-semiconductor (M1) and the 6th bipolar transistor (Q6) all connects ground terminal;

    Wherein, the emitter of the first bipolar transistor (Q1) is the signal input part of the wideband low noise amplifier, the 5thThe collector of bipolar transistor (Q5) is the signal output end of the wideband low noise amplifier;

    First bipolar transistor(Q1), the second bipolar transistor (Q2), third bipolar transistor (Q3), the 4th bipolar transistor (Q4), the 5th bipolarTransistor npn npn (Q5), the 6th bipolar transistor (Q6) and the 7th bipolar transistor (Q7) are germanium-silicon heterojunction bipolarTransistor.

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