Including at least the etching solution and engraving method of indium and the oxide of gallium

Including at least the etching solution and engraving method of indium and the oxide of gallium

  • CN 103,911,159 B
  • Filed: 12/20/2013
  • Issued: 09/27/2019
  • Est. Priority Date: 12/28/2012
  • Status: Active Grant
First Claim
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1. a kind of etching solution, for for etch the etching solution for including at least the oxide of indium and gallium, include sulfuric acid or its salt, withAnd carboxylic acid or its salt other than oxalic acid, the pH value of the etching solution are 0.4 or less, wherein the carboxylic acid other than oxalic acidOr its salt is selected from being made of glycolic, lactic acid, malonic acid, maleic acid, succinic acid, malic acid, tartaric acid and citric acidGroup more than one.

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