The forming method and semiconductor devices of self-aligned metal silicate

The forming method and semiconductor devices of self-aligned metal silicate

  • CN 103,915,326 B
  • Filed: 01/08/2013
  • Issued: 01/29/2019
  • Est. Priority Date: 01/08/2013
  • Status: Active Grant
First Claim
Patent Images

1. a kind of forming method of self-aligned metal silicate characterized by comprisingDoped region is formed on the surface of silicon layer;

  • The first metal layer is formed on the surface of the doped region;

    Annealing process is carried out, so that the first metal layer and the silicon on the doped region surface contacted therewith combine and forms the first gold medalBelong to silicide layer;

    Remove unreacted the first metal layer;

    The second metal layer different from the first metal layer material is formed on first metal silicide layer;

    Annealing process is carried out, so that the surface layer of first metal silicide layer and second metal layer combine and form the second metallic siliconCompound layer, to form metal silicide layer on doped region surface, the metal silicide layer includes inside semiconductor substrateIt successively include the first metal silicide layer and the second metal silicide layer, first metal silicide layer on the direction on surfaceMaterial is NiSi, and second silicide layer materials are TiNiSi;

    Remove unreacted second metal layer.

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