Schottky barrier diode

Schottky barrier diode

  • CN 103,918,082 B
  • Filed: 11/08/2012
  • Issued: 08/20/2019
  • Est. Priority Date: 11/09/2011
  • Status: Active Grant
First Claim
Patent Images

1. a kind of Schottky barrier diode, has:

  • n-type semiconductor layer;

    Schottky electrode layer, with the n-type semiconductor layerFirst surface formed Schottky contacts;

    And ohmic electrode layer, the phase with the first surface of the n-type semiconductor layerAnti- second surface forms Ohmic contact,The n-type semiconductor layer includes;

    the first semiconductor layer, has the first carrier concentration, with the Schottky electrode layerSchottky contacts are formed, by Ga2O3The epitaxial layer that class compound semiconductor is constituted is formed;

    And second semiconductor layer, haveThe electron carrier density higher than first semiconductor layer forms Ohmic contact with the ohmic electrode layer, by Ga2O3ClassThe substrate that object semiconductor is constituted is closed to be formed,Electron carrier density in first semiconductor layer is than 1 ×

    1018cm-3It is low, when setting reverse withstand voltage as 600V-When 10000V, it is 2.0 μ

    m~33.3 μ

    m of thickness that the value that first semiconductor layer corresponds to the reverse withstand voltage, which has range,.

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