Semiconductor devices and its manufacturing method

Semiconductor devices and its manufacturing method

  • CN 103,928,333 B
  • Filed: 01/15/2013
  • Issued: 03/12/2019
  • Est. Priority Date: 01/15/2013
  • Status: Active Grant
First Claim
Patent Images

1. a kind of method of manufacturing semiconductor devices, comprising:

  • Fin structure is formed on the substrate;

    Separation layer is formed on the substrate, separation layer exposes a part of fin structure, and the exposed portion of fin structure is used as should be partlyThe fin of conductor device;

    Sacrificial gate conductor layer is formed on separation layer, the sacrificial gate conductor layer is via sacrifice gate dielectric layer and fin structure phaseIt hands over;

    Grid side wall is formed on the side wall of sacrificial gate conductor layer;

    Dielectric layer is formed on separation layer, and dielectric layer is planarized, to expose sacrificial gate conductor layer;

    It is optionally removed sacrificial gate conductor layer, to form grid slot on the inside of grid side wall;

    Via grid slot, break-through blocking portion is formed in the region below fin;

    AndGrid conductor is formed in grid slot.

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