Etching method and array substrate

Etching method and array substrate

  • CN 103,972,075 A
  • Filed: 05/05/2014
  • Published: 08/06/2014
  • Est. Priority Date: 05/05/2014
  • Status: Active Application
First Claim
Patent Images

1. a lithographic method, is characterized in that, described method comprises:

  • On substrate, form indium oxide layer tin ITO rete;

    On described ITO rete, form one deck photoresist layer;

    Above described photoresist layer, mask plate is set, described mask plate not exclusively covers described photoresist layer;

    Dispel the photoresist not covered by described mask plate in described photoresist layer;

    Adopt wet-etching technology to etch away the described ITO rete not covered by described photoresist layer in described ITO rete;

    Adopt dry etch process to etch away in the described ITO rete not covered by described photoresist layer in described ITO rete by ITO rete residual after described wet-etching technology etching.

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