A kind of thin-film transistor and preparation method thereof, display base plate, display unit

A kind of thin-film transistor and preparation method thereof, display base plate, display unit

  • CN 103,972,299 B
  • Filed: 04/28/2014
  • Issued: 03/30/2016
  • Est. Priority Date: 04/28/2014
  • Status: Active Grant
First Claim
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1. a manufacture method for thin-film transistor, comprising:

  • Substrate is formed active layer material layer;

    Active layer material layer is formed etching barrier layer materials layer, and described etching barrier layer materials layer is electric conducting material source, drain metal etching liquid being played to barrier effect;

    Adopt a patterning processes to be formed with active layer and initial etch stopper layer pattern to described active layer material layer and etching barrier layer materials layer, described initial etching barrier layer figure comprises first area, second area and the 3rd region;

    Described first area and the 3rd region upper surface are respectively the region of formation source, drain electrode, and described second area is the region in described initial etch stopper layer pattern except first area and the 3rd region;

    On described first area and second area, source, drain electrode is formed respectively by patterning processes;

    Carry out annealing process, make the electric conducting material of second area in described initial etch stopper layer pattern be transformed into insulating material, form etch stopper layer pattern.

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