High-voltage semiconductor element and manufacturing method thereof

High-voltage semiconductor element and manufacturing method thereof

  • CN 103,996,708 A
  • Filed: 02/19/2013
  • Published: 08/20/2014
  • Est. Priority Date: 02/19/2013
  • Status: Active Application
First Claim
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1. a high-voltage semiconductor element, is characterized in that, comprising:

  • Semiconductor substrate, has one first conduction type;

    One grid structure, is positioned on of described semiconductor substrate;

    A pair of sept, be arranged at respectively on a sidewall of described grid structure, one of wherein said a pair of sept is a compound sept, and described compound sept comprises one first insulation spacer, a false grid structure and one second insulation spacer that contacts described grid structure;

    One first drift region, is arranged in of described semiconductor substrate and is positioned at one of the described grid structure below with one of described a pair of sept, has one second conduction type in contrast to described the first conduction type;

    AndA pair of doped region, is arranged at respectively in of described semiconductor substrate of opposite side of described grid structure, and wherein said a pair of doped region has described the second conduction type, and one of described a pair of doped region is arranged in described the first drift region.

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